Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gain Bandwidth Product
- 50MHz
- Radyasyon Dayanımı
- No
- Weight
- 453.59237mg
- Transistor Element Material
- SILICON
- Continuous Collector Current
- 300mA
- Fabrika Tedarik Süresi
- 15 Weeks
- Vce Saturation Max Ib Ic
- 500mV @ 6mA, 50mA
- Kılıf / Paket
- E-Line-3, Formed Leads
- Terminal Formu
- WIRE
- Uzunluk
- 4.77mm
- Max Collector Current
- 300mA
- Tepe Reflow Süresi (maks. sn)
- 40
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collector Emitter Voltage Vceo
- 400V
- Collector Base Voltage Vcbo
- 400V
- Akım Değeri
- 300mA
- Max Power Dissipation
- 1W
- Yayın Yılı
- 2006
- Number Of Elements
- 1
- Element Configuration
- Single
- Yükseklik
- 4.01mm
- Current Collector Cutoff Max
- 100nA
- Transition Frequency
- 50MHz
- Kurşunsuz
- Lead Free
- Terminal Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 400V
- Montaj
- Through Hole
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Frekans
- 50MHz
- Collectoremitter Saturation Voltage
- 500mV
- Pin Sayısı
- 3
- Polaritychannel Type
- NPN
- Voltage Rated Dc
- 400V
- Ambalaj
- Tape & Box (TB)
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 50mA 10V
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- -55°C~200°C TJ
- Terminal Kaplaması
- Matte Tin (Sn)
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