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Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 30V
- Max Power Dissipation
- 1W
- Akım Değeri
- 1A
- Yayın Yılı
- 2006
- Montaj Tipi
- Through Hole
- Collector Base Voltage Vcbo
- 50V
- Transistor Type
- NPN
- Number Of Elements
- 1
- Genişlik
- 2.41mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 4.01mm
- Kurşunsuz Kodu
- yes
- Element Configuration
- Single
- Power Dissipation
- 1W
- Çalışma Sıcaklığı
- -55°C~200°C TJ
- Uzunluk
- 4.77mm
- ECCN Kodu
- EAR99
- Max Collector Current
- 1A
- Terminal Kaplaması
- Matte Tin (Sn)
- Emitter Base Voltage Vebo
- 5V
- Parça Durumu
- Active
- Tepe Reflow Süresi (maks. sn)
- 40
- JESD-609 Kodu
- e3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Frekans
- 150MHz
- Transistor Element Material
- SILICON
- Voltage Rated Dc
- 30V
- Vce Saturation Max Ib Ic
- 1V @ 200mA, 2A
- Pin Sayısı
- 3
- Collectoremitter Saturation Voltage
- 1V
- Polaritychannel Type
- NPN
- Continuous Collector Current
- 1A
- Reach Svhc
- No SVHC
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 500mA 2V
- Ambalaj
- Bulk
- Kılıf / Paket
- E-Line-3
- Terminal Formu
- WIRE
- Gain Bandwidth Product
- 150MHz
- Transition Frequency
- 150MHz
- Current Collector Cutoff Max
- 100nA ICBO
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