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Specifications
- Gate To Source Voltage Vgs
- 20V
- Number Of Channels
- 1
- Reach Svhc
- No SVHC
- Power Dissipation Max
- 625mW Ta
- Drain Currentmax Abs Id
- 0.27A
- Genişlik
- 2.41mm
- Continuous Drain Current Id
- 270mA
- Uzunluk
- 4.77mm
- Fabrika Tedarik Süresi
- 17 Weeks
- Terminal Pozisyonu
- BOTTOM
- Montaj
- Through Hole
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- Matte Tin (Sn)
- Lead Pitch
- 1.27mm
- Terminal Sayısı
- 3
- JESD-609 Kodu
- e3
- Input Capacitance Ciss Max Vds
- 60pF @ 25V
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 270mA Ta
- Weight
- 453.59237mg
- Drain To Source Breakdown Voltage
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 5 Ω @ 500mA, 10V
- Power Dissipation
- 625mW
- Terminal Formu
- WIRE
- Vgs Max
- ±20V
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- 60V
- ECCN Kodu
- EAR99
- Feedback Capmax Crss
- 5 pF
- Direnç
- 5Ohm
- Transistor Element Material
- SILICON
- Threshold Voltage
- 2.5V
- Pin Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Vgsth Max Id
- 2.5V @ 1mA
- Montaj Tipi
- Through Hole
- Yükseklik
- 4.01mm
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Akım Değeri
- 270mA
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