Volume pricing
- 1+ pcs$0.34
- 10+ pcs$0.32
- 100+ pcs$0.31
- 500+ pcs$0.29
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Emitter Voltage Vceo
- 30V
- JESD-609 Kodu
- e3
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 20000 @ 100mA 5V
- Yükseklik
- 1mm
- Collector Base Voltage Vcbo
- 30V
- Element Configuration
- Single
- Power Max
- 200mW
- Kurşunsuz Kodu
- yes
- Yayın Yılı
- 2007
- Weight
- 6.010099mg
- Hfemin
- 10000
- Transistor Type
- PNP - Darlington
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 19 Weeks
- Pin Sayısı
- 3
- Frequency Transition
- 125MHz
- Kurşunsuz
- Lead Free
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Terminal Formu
- GULL WING
- Terminal Kaplaması
- Matte Tin (Sn)
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Vce Saturation Max Ib Ic
- 1.5V @ 100μA, 100mA
- Tepe Reflow Süresi (maks. sn)
- 40
- Current Collector Cutoff Max
- 100nA ICBO
- Parça Durumu
- Active
- Emitter Base Voltage Vebo
- 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Uzunluk
- 2.2mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Genişlik
- 1.35mm
- Polarity
- PNP
- Temel Parça No
- MMSTA64
- Max Collector Current
- 500mA
- Transition Frequency
- 125MHz
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