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MMSTA55-7-F

Diodes Incorporated

MMSTA55-7-F

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.30
  • 10+ pcs$0.29
  • 100+ pcs$0.27
  • 500+ pcs$0.26

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RoHS

Compliant

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Specifications

Transition Frequency
50MHz
Max Collector Current
500mA
Power Dissipation
200mW
Temel Parça No
MMSTA55
Emitter Base Voltage Vebo
-4V
Çalışma Sıcaklığı
-55°C~150°C TJ
Uzunluk
2.2mm
Nem Hassasiyeti (MSL)
1 (Unlimited)
Genişlik
1.35mm
Tepe Reflow Süresi (maks. sn)
40
Parça Durumu
Active
Current Collector Cutoff Max
100nA ICBO
Vce Saturation Max Ib Ic
250mV @ 10mA, 100mA
Reach Svhc
No SVHC
Tepe Reflow Sıcaklığı (°C)
260
Terminal Sayısı
3
Kılıf / Paket
SC-70, SOT-323
Collectoremitter Saturation Voltage
-250mV
Continuous Collector Current
-500mA
Terminal Pozisyonu
DUAL
Max Breakdown Voltage
60V
Max Power Dissipation
200mW
Transistor Application
SWITCHING
Akım Değeri
-500mA
Voltage Rated Dc
-60V
Number Of Elements
1
Collectoremitter Breakdown Voltage
60V
Gain Bandwidth Product
50MHz
Fabrika Tedarik Süresi
19 Weeks
Hfemin
100
Transistor Type
PNP
RoHS Durumu
ROHS3 Compliant
ECCN Kodu
EAR99
Weight
6.010099mg
Yayın Yılı
2007
Element Configuration
Single
Kurşunsuz Kodu
yes
Yükseklik
1mm
Dc Current Gain Hfe Min Ic Vce
100 @ 100mA 1V
Collector Base Voltage Vcbo
60V

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