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MMSTA06-7-F

Diodes Incorporated

MMSTA06-7-F

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.04
  • 10+ pcs$0.04
  • 100+ pcs$0.04
  • 500+ pcs$0.03

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Compliant

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Specifications

Reach Svhc
No SVHC
Tepe Reflow Sıcaklığı (°C)
260
Tepe Reflow Süresi (maks. sn)
40
Current Collector Cutoff Max
100nA
Parça Durumu
Active
Vce Saturation Max Ib Ic
250mV @ 10mA, 100mA
Temel Parça No
MMSTA06
Uzunluk
2.2mm
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
4V
Çalışma Sıcaklığı
-55°C~150°C TJ
Genişlik
1.35mm
Transition Frequency
100MHz
Max Collector Current
500mA
Power Dissipation
200mW
Gain Bandwidth Product
100MHz
Number Of Elements
1
Voltage Rated Dc
80V
Collectoremitter Breakdown Voltage
80V
Transistor Application
SWITCHING
Akım Değeri
500mA
Kılıf / Paket
SC-70, SOT-323
Terminal Sayısı
3
Terminal Pozisyonu
DUAL
Continuous Collector Current
500mA
Collectoremitter Saturation Voltage
250mV
Max Breakdown Voltage
80V
Max Power Dissipation
200mW
Transistor Element Material
SILICON
JESD-609 Kodu
e3
Collector Emitter Voltage Vceo
80V
Element Configuration
Single
Kurşunsuz Kodu
yes
Yükseklik
1mm
Dc Current Gain Hfe Min Ic Vce
100 @ 100mA 1V
Collector Base Voltage Vcbo
80V
Weight
6.010099mg
Yayın Yılı
2007
Fabrika Tedarik Süresi
19 Weeks
Transistor Type
NPN

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