Volume pricing
- 1+ pcs$0.04
- 10+ pcs$0.03
- 100+ pcs$0.03
- 500+ pcs$0.03
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Current Collector Cutoff Max
- 50nA ICBO
- Tepe Reflow Süresi (maks. sn)
- 30
- Vce Saturation Max Ib Ic
- 500mV @ 5mA, 50mA
- Reach Svhc
- No SVHC
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transition Frequency
- 100MHz
- Max Collector Current
- -200mA
- Power Dissipation
- 200mW
- Temel Parça No
- MMST5401
- Genişlik
- 1.35mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Emitter Base Voltage Vebo
- -5V
- Uzunluk
- 2.2mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- -150V
- Voltage Rated Dc
- -150V
- Number Of Elements
- 1
- Gain Bandwidth Product
- 100MHz
- Terminal Sayısı
- 3
- Currentcollector Ic Max
- 200mA
- Kılıf / Paket
- SC-70, SOT-323
- Max Power Dissipation
- 200mW
- Max Breakdown Voltage
- 150V
- Collectoremitter Saturation Voltage
- -500mV
- Terminal Pozisyonu
- DUAL
- Transistor Application
- SWITCHING
- Akım Değeri
- -200mA
- Kurşunsuz Kodu
- yes
- Element Configuration
- Single
- Collector Base Voltage Vcbo
- -160V
- Dc Current Gain Hfe Min Ic Vce
- 60 @ 10mA 5V
- Yükseklik
- 1.1mm
- Transistor Element Material
- SILICON
- Max Junction Temperature Tj
- 150°C
- Collector Emitter Voltage Vceo
- -150V
- JESD-609 Kodu
- e3
- Fabrika Tedarik Süresi
- 19 Weeks
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
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