Volume pricing
- 1+ pcs$0.14
- 500+ pcs$0.10
- 1000+ pcs$0.08
- 2000+ pcs$0.08
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 2.2mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Emitter Base Voltage Vebo
- -4V
- Genişlik
- 1.35mm
- Max Collector Current
- 200mA
- Transition Frequency
- 250MHz
- Tepe Reflow Sıcaklığı (°C)
- 260
- Reach Svhc
- No SVHC
- Vce Saturation Max Ib Ic
- 400mV @ 5mA, 50mA
- Tepe Reflow Süresi (maks. sn)
- 40
- Current Collector Cutoff Max
- 50nA ICBO
- Parça Durumu
- Active
- Akım Değeri
- -200mA
- Transistor Application
- SWITCHING
- Terminal Pozisyonu
- DUAL
- Collectoremitter Saturation Voltage
- -400mV
- Continuous Collector Current
- -200mA
- Max Breakdown Voltage
- 25V
- Max Power Dissipation
- 200mW
- Kılıf / Paket
- SC-70, SOT-323
- Terminal Sayısı
- 3
- Gain Bandwidth Product
- 250MHz
- Number Of Elements
- 1
- Voltage Rated Dc
- -25V
- Collectoremitter Breakdown Voltage
- 25V
- Yayın Yılı
- 2007
- Weight
- 6.010099mg
- Transistor Type
- PNP
- Hfemin
- 120
- ECCN Kodu
- EAR99
- RoHS Durumu
- ROHS3 Compliant
- Fabrika Tedarik Süresi
- 16 Weeks
- JESD-609 Kodu
- e3
- Collector Emitter Voltage Vceo
- 400mV
- Transistor Element Material
- SILICON
- Yükseklik
- 1mm
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 2mA 1V
- Collector Base Voltage Vcbo
- -25V
- Element Configuration
- Single
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