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MMBTA56Q-7-F

Diodes Incorporated

MMBTA56Q-7-F

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.15
  • 10+ pcs$0.14
  • 100+ pcs$0.13
  • 500+ pcs$0.12

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RoHS

Compliant

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Specifications

Transistor Element Material
SILICON
Frequency Transition
50MHz
RoHS Durumu
ROHS3 Compliant
Parça Durumu
Active
Terminal Sayısı
3
Collectoremitter Breakdown Voltage
80V
Transition Frequency
50MHz
Jesd30 Code
R-PDSO-G3
Transistor Application
SWITCHING
Nem Hassasiyeti (MSL)
1 (Unlimited)
ECCN Kodu
EAR99
Montaj Tipi
Surface Mount
Tepe Reflow Süresi (maks. sn)
30
Number Of Elements
1
Fabrika Tedarik Süresi
19 Weeks
Terminal Formu
GULL WING
Montaj
Surface Mount
Çalışma Sıcaklığı
-55°C~150°C TJ
Terminal Pozisyonu
DUAL
Ambalaj
Tape & Reel (TR)
Configuration
SINGLE
Max Power Dissipation
350mW
JESD-609 Kodu
e3
Seri
Automotive, AEC-Q101
Polaritychannel Type
PNP
Terminal Kaplaması
Matte Tin (Sn)
Yayın Yılı
2006
Collector Emitter Voltage Vceo
250mV
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Current Collector Cutoff Max
100nA ICBO
Max Collector Current
500mA
Tepe Reflow Sıcaklığı (°C)
260
Max Breakdown Voltage
80V
Vce Saturation Max Ib Ic
250mV @ 10mA, 100mA
Dc Current Gain Hfe Min Ic Vce
100 @ 100mA 1V
Additional Feature
HIGH RELIABILITY
Power Max
350mW
Transistor Type
PNP

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