Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Uzunluk
- 3.05mm
- Emitter Base Voltage Vebo
- 4V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Frekans
- 50MHz
- Terminal Sayısı
- 3
- Collector Base Voltage Vcbo
- 80V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- JESD-609 Kodu
- e3
- Max Power Dissipation
- 300mW
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 19 Weeks
- Terminal Formu
- GULL WING
- Collector Emitter Voltage Vceo
- 80V
- Current Collector Cutoff Max
- 100nA ICBO
- Continuous Collector Current
- -500mA
- Yayın Yılı
- 2008
- Genişlik
- 1.4mm
- Kurşunsuz Kodu
- yes
- Vce Saturation Max Ib Ic
- 250mV @ 10mA, 100mA
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 100mA 1V
- Additional Feature
- HIGH RELIABILITY
- Transistor Type
- PNP
- Weight
- 7.994566mg
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collectoremitter Saturation Voltage
- -250mV
- Max Breakdown Voltage
- 80V
- Akım Değeri
- -100mA
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- -80V
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz
- Lead Free
- Pin Sayısı
- 3
- Parça Durumu
- Active
- Collectoremitter Breakdown Voltage
- 80V
- Transition Frequency
- 50MHz
- Power Dissipation
- 300mW
- Ambalaj
- Tape & Reel (TR)
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