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Support
Technical team support
Specifications
- Transistor Type
- NPN
- Vce Saturation Max Ib Ic
- 250mV @ 10mA, 100mA
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 100mA 1V
- Additional Feature
- HIGH RELIABILITY
- Akım Değeri
- 100mA
- Weight
- 7.994566mg
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collectoremitter Saturation Voltage
- 250mV
- Max Breakdown Voltage
- 60V
- Current Collector Cutoff Max
- 100nA
- Continuous Collector Current
- 500mA
- Collector Emitter Voltage Vceo
- 60V
- Yayın Yılı
- 2017
- Genişlik
- 1.4mm
- Kurşunsuz Kodu
- yes
- Terminal Kaplaması
- Matte Tin (Sn)
- JESD-609 Kodu
- e3
- Max Power Dissipation
- 300mW
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Formu
- GULL WING
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 15 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Uzunluk
- 3.05mm
- Emitter Base Voltage Vebo
- 4V
- Transistor Application
- SWITCHING
- Collector Base Voltage Vcbo
- 60V
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Frekans
- 100MHz
- Element Configuration
- Single
- Reach Svhc
- No SVHC
- Hfemin
- 100
- Yükseklik
- 1mm
- Max Collector Current
- 500mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Polaritychannel Type
- NPN
- Seri
- Automotive, AEC-Q101
- Power Dissipation
- 350mW
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