Volume pricing
- 1+ pcs$0.21
- 10+ pcs$0.20
- 100+ pcs$0.19
- 500+ pcs$0.17
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Collector Cutoff Max
- 50nA ICBO
- Continuous Collector Current
- 200mA
- Collector Emitter Voltage Vceo
- 160V
- Yayın Yılı
- 2008
- Genişlik
- 1.4mm
- Transistor Type
- NPN
- Vce Saturation Max Ib Ic
- 200mV @ 5mA, 50mA
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- Akım Değeri
- 200mA
- Weight
- 7.994566mg
- Tepe Reflow Sıcaklığı (°C)
- 235
- Max Breakdown Voltage
- 160V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Uzunluk
- 3.05mm
- Emitter Base Voltage Vebo
- 6V
- Transistor Application
- SWITCHING
- Collector Base Voltage Vcbo
- 180V
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Frekans
- 300MHz
- Max Power Dissipation
- 300mW
- JESD-609 Kodu
- e0
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Formu
- GULL WING
- Number Of Elements
- 1
- Max Collector Current
- 600mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Polaritychannel Type
- NPN
- Element Configuration
- Single
- Reach Svhc
- No SVHC
- Hfemin
- 80
- Yükseklik
- 1mm
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- 160V
- Collectoremitter Breakdown Voltage
- 160V
- Transition Frequency
- 100MHz
- Kurşunsuz
- Contains Lead
- RoHS Durumu
- Non-RoHS Compliant
- Pin Sayısı
- 3
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