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MJD32CQ-13

Diodes Incorporated

MJD32CQ-13

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.49
  • 10+ pcs$0.46
  • 100+ pcs$0.43
  • 500+ pcs$0.41

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RoHS

Compliant

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Specifications

Power Dissipation
15W
Max Collector Current
3A
JESD-609 Kodu
e3
Max Breakdown Voltage
100V
Kılıf / Paket
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material
SILICON
Kurşunsuz Kodu
yes
Jesd30 Code
R-PSSO-G2
Transistor Type
PNP
Emitter Base Voltage Vebo
6V
Polaritychannel Type
PNP
RoHS Durumu
ROHS3 Compliant
Terminal Kaplaması
Matte Tin (Sn)
Current Collector Cutoff Max
1μA
ECCN Kodu
EAR99
Terminal Formu
GULL WING
Transition Frequency
3MHz
Collectoremitter Breakdown Voltage
100V
Transistor Application
SWITCHING
Ambalaj
Tape & Reel (TR)
Parça Durumu
Active
Number Of Elements
1
Max Power Dissipation
15W
Fabrika Tedarik Süresi
13 Weeks
Terminal Pozisyonu
SINGLE
Additional Feature
HIGH RELIABILITY
Case Connection
COLLECTOR
Collector Emitter Voltage Vceo
1.2V
Configuration
SINGLE
Frekans
3MHz
Dc Current Gain Hfe Min Ic Vce
10 @ 3A 4V
Montaj Tipi
Surface Mount
Yayın Yılı
2012
Nem Hassasiyeti (MSL)
1 (Unlimited)
Collector Base Voltage Vcbo
100V
Tepe Reflow Sıcaklığı (°C)
260
Vce Saturation Max Ib Ic
1.2V @ 375mA, 3A
Çalışma Sıcaklığı
-55°C~150°C TJ
Montaj
Surface Mount
Tepe Reflow Süresi (maks. sn)
40

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