Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Vce Saturation Max Ib Ic
- 250mV @ 50mA, 1A
- Kurşunsuz
- Lead Free
- Tepe Reflow Süresi (maks. sn)
- 40
- Genişlik
- 1.3mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Ambalaj
- Tape & Reel (TR)
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 200mA 10V
- Power Dissipation
- 625mW
- Montaj
- Surface Mount
- JESD-609 Kodu
- e3
- Yükseklik
- 1mm
- Terminal Sayısı
- 3
- Collector Base Voltage Vcbo
- 125V
- Collectoremitter Breakdown Voltage
- 125V
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Akım Değeri
- 1A
- Yayın Yılı
- 2010
- Weight
- 7.994566mg
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Emitter Base Voltage Vebo
- 5V
- Reach Svhc
- No SVHC
- Transition Frequency
- 155MHz
- Number Of Elements
- 1
- Terminal Formu
- GULL WING
- Collector Emitter Voltage Vceo
- 125V
- Pin Sayısı
- 3
- Max Collector Current
- 1A
- Current Collector Cutoff Max
- 100nA
- Terminal Pozisyonu
- DUAL
- Continuous Collector Current
- 1A
- Transistor Application
- SWITCHING
- Kurşunsuz Kodu
- yes
- Uzunluk
- 2.9mm
- Gain Bandwidth Product
- 155MHz
- Transistor Type
- NPN
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Element Material
- SILICON
- Temel Parça No
- FMMT624
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