Volume pricing
- 1+ pcs$0.53
- 10+ pcs$0.50
- 100+ pcs$0.47
- 500+ pcs$0.44
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Genişlik
- 1.4mm
- Tepe Reflow Süresi (maks. sn)
- 40
- Kurşunsuz
- Lead Free
- Vce Saturation Max Ib Ic
- 300mV @ 1mA, 100mA
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation
- 500mW
- Dc Current Gain Hfe Min Ic Vce
- 150 @ 500mA 2V
- Ambalaj
- Cut Tape (CT)
- Collector Base Voltage Vcbo
- 35V
- Yükseklik
- 1.1mm
- Terminal Sayısı
- 3
- JESD-609 Kodu
- e3
- Montaj
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Akım Değeri
- -1A
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Collectoremitter Breakdown Voltage
- 30V
- Weight
- 7.994566mg
- Yayın Yılı
- 2012
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Emitter Base Voltage Vebo
- -5V
- Transition Frequency
- 100MHz
- Reach Svhc
- No SVHC
- Number Of Elements
- 1
- Collector Emitter Voltage Vceo
- 30V
- Terminal Formu
- GULL WING
- Pin Sayısı
- 3
- Terminal Pozisyonu
- DUAL
- Current Collector Cutoff Max
- 100nA ICBO
- Max Collector Current
- 1A
- Uzunluk
- 3mm
- Gain Bandwidth Product
- 100MHz
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Continuous Collector Current
- -1A
- Transistor Element Material
- SILICON
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Type
- PNP
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