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DXT2013P5-13

Diodes Incorporated

DXT2013P5-13

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.80
  • 10+ pcs$0.76
  • 100+ pcs$0.71
  • 500+ pcs$0.67

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RoHS

Compliant

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Specifications

Transistor Element Material
SILICON
RoHS Durumu
ROHS3 Compliant
Weight
95.991485mg
Kurşunsuz Kodu
yes
Jesd30 Code
R-PDSO-F3
Current Collector Cutoff Max
20nA ICBO
Tepe Reflow Sıcaklığı (°C)
260
Temel Parça No
DXT2013P5
Max Breakdown Voltage
100V
Max Power Dissipation
3.2W
Terminal Kaplaması
Matte Tin (Sn)
Collector Base Voltage Vcbo
140V
Yayın Yılı
2012
Transistor Type
PNP
Radyasyon Dayanımı
No
Terminal Formu
FLAT
Max Collector Current
5A
Pin Sayısı
4
Terminal Sayısı
3
Parça Durumu
Active
Polaritychannel Type
PNP
Montaj
Surface Mount
Ambalaj
Tape & Reel (TR)
Montaj Tipi
Surface Mount
Emitter Base Voltage Vebo
-7V
Kılıf / Paket
PowerDI™ 5
Power Dissipation
3.2W
Transistor Application
SWITCHING
Continuous Collector Current
-5A
Dc Current Gain Hfe Min Ic Vce
100 @ 1A 1V
Reach Svhc
No SVHC
Collector Emitter Voltage Vceo
100V
Number Of Elements
1
Fabrika Tedarik Süresi
15 Weeks
Transition Frequency
125MHz
Case Connection
COLLECTOR
Collectoremitter Breakdown Voltage
100V
Pin Sayısı
5
Element Configuration
Single
Gain Bandwidth Product
125MHz

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