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DVRN6056-7-F

Diodes Incorporated

DVRN6056-7-F

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.20
  • 10+ pcs$0.19
  • 100+ pcs$0.18
  • 500+ pcs$0.17

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RoHS

Compliant

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Specifications

Tepe Reflow Sıcaklığı (°C)
260
Transition Frequency
250MHz
Pin Sayısı
6
Terminal Sayısı
6
Max Power Dissipation
300mW
Dc Current Gain Hfe Min Ic Vce
100 @ 150mA 1V
Number Of Elements
1
Polaritychannel Type
NPN
Montaj
Surface Mount
JESD-609 Kodu
e3
ECCN Kodu
EAR99
Yayın Yılı
2008
Vce Saturation Max Ib Ic
750mV @ 50mA, 500mA
Kılıf / Paket
SOT-23-6
Collector Emitter Voltage Vceo
750mV
Configuration
SINGLE WITH BUILT-IN DIODE
Parça Durumu
Active
Terminal Formu
GULL WING
Fabrika Tedarik Süresi
19 Weeks
Terminal Pozisyonu
DUAL
Turn Off Timemax Toff
255ns
Çalışma Sıcaklığı
-55°C~150°C TJ
Transistor Type
NPN + Zener Diode (Isolated)
Transistor Application
SWITCHING
Nem Hassasiyeti (MSL)
1 (Unlimited)
Max Collector Current
600mA
Turn On Timemax Ton
35ns
Ambalaj
Tape & Reel (TR)
Reach Svhc
No SVHC
RoHS Durumu
ROHS3 Compliant
Montaj Tipi
Surface Mount
Transistor Element Material
SILICON
Pin Sayısı
6
Kurşunsuz Kodu
yes
Frequency Transition
250MHz
Qualification Status
Not Qualified
Power Max
300mW
Collectoremitter Breakdown Voltage
40V
Terminal Kaplaması
Matte Tin (Sn)
Tepe Reflow Süresi (maks. sn)
40

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