Volume pricing
- 1+ pcs$0.21
- 10+ pcs$0.20
- 100+ pcs$0.19
- 500+ pcs$0.18
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Kaplaması
- Matte Tin (Sn)
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 625mW
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 150 @ 500mA 5V
- Terminal Sayısı
- 6
- Collector Base Voltage Vcbo
- -120V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Emitter Base Voltage Vebo
- -5V
- Max Breakdown Voltage
- 100V
- Collectoremitter Breakdown Voltage
- 100V
- Gain Bandwidth Product
- 100MHz
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Max Collector Current
- 1A
- Continuous Collector Current
- -1A
- Parça Durumu
- Active
- Number Of Elements
- 1
- Pin Sayısı
- 6
- Fabrika Tedarik Süresi
- 16 Weeks
- Polaritychannel Type
- PNP
- Power Max
- 625mW
- Element Configuration
- Dual
- Current Collector Cutoff Max
- 100nA
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 40
- Yayın Yılı
- 2010
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Tepe Reflow Sıcaklığı (°C)
- 260
- Reach Svhc
- No SVHC
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Collector Emitter Voltage Vceo
- 320mV
- Collectoremitter Saturation Voltage
- -120mV
- Pin Sayısı
- 6
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transition Frequency
- 100MHz
- JESD-609 Kodu
- e3
- Vce Saturation Max Ib Ic
- 320mV @ 100mA, 1A
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