Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Hfemin
- 350
- Current Collector Cutoff Max
- 100nA ICBO
- Element Configuration
- Single
- Polaritychannel Type
- NPN
- Pin Sayısı
- 3
- Number Of Elements
- 1
- Max Collector Current
- 2A
- Max Breakdown Voltage
- 40V
- Gain Bandwidth Product
- 100MHz
- Genişlik
- 1.3mm
- Kurşunsuz
- Lead Free
- Collector Base Voltage Vcbo
- 40V
- Emitter Base Voltage Vebo
- 5V
- Yükseklik
- 1mm
- Terminal Sayısı
- 3
- Uzunluk
- 2.9mm
- Montaj
- Surface Mount
- Terminal Formu
- GULL WING
- Vce Saturation Max Ib Ic
- 320mV @ 200mA, 2A
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Saturation Voltage
- 320mV
- Terminal
- SMD/SMT
- Temel Parça No
- DSS4240
- Collector Emitter Voltage Vceo
- 40V
- Radyasyon Dayanımı
- No
- Frekans
- 100MHz
- Kurşunsuz Kodu
- yes
- Weight
- 7.994566mg
- Parça Durumu
- Not For New Designs
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Contact Plating
- Tin
- Collectoremitter Breakdown Voltage
- 40V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Pozisyonu
- DUAL
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 600mW
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 1A 2V
- Additional Feature
- HIGH RELIABILITY
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