Volume pricing
- 1+ pcs$0.23
- 10+ pcs$0.22
- 100+ pcs$0.21
- 500+ pcs$0.19
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Polaritychannel Type
- PNP
- Power Max
- 450mW
- Element Configuration
- Single
- Current Collector Cutoff Max
- 100nA ICBO
- Max Collector Current
- 100mA
- Continuous Collector Current
- -100mA
- Parça Durumu
- Active
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Fabrika Tedarik Süresi
- 15 Weeks
- Collectoremitter Breakdown Voltage
- 50V
- Max Breakdown Voltage
- 50V
- Gain Bandwidth Product
- 80MHz
- Kılıf / Paket
- 3-XFDFN
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Max Power Dissipation
- 450mW
- Terminal Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA 6V
- Transistor Element Material
- SILICON
- Collector Base Voltage Vcbo
- -50V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Pozisyonu
- BOTTOM
- Emitter Base Voltage Vebo
- -5V
- Case Connection
- COLLECTOR
- Vce Saturation Max Ib Ic
- 300mV @ 10mA, 100mA
- Additional Feature
- HIGH RELIABILITY
- Transistor Type
- PNP
- Montaj
- Surface Mount
- Collectoremitter Saturation Voltage
- -300mV
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e4
- Transition Frequency
- 80MHz
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Collector Emitter Voltage Vceo
- 300mV
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 40
- Yayın Yılı
- 2011
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