Volume pricing
- 1+ pcs$0.54
- 10+ pcs$0.51
- 100+ pcs$0.49
- 500+ pcs$0.46
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 450mW
- Element Configuration
- Single
- Current Collector Cutoff Max
- 100nA ICBO
- Polarity
- PNP
- Pin Sayısı
- 3
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 16 Weeks
- Max Collector Current
- 100mA
- Parça Durumu
- Active
- Kılıf / Paket
- 3-XFDFN
- Collectoremitter Breakdown Voltage
- 50V
- Max Breakdown Voltage
- 50V
- Gain Bandwidth Product
- 80MHz
- Genişlik
- 600μm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kurşunsuz
- Lead Free
- Collector Base Voltage Vcbo
- 50V
- Terminal Pozisyonu
- BOTTOM
- Emitter Base Voltage Vebo
- 5V
- Yükseklik
- 350μm
- Max Power Dissipation
- 450mW
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA 6V
- Transistor Element Material
- SILICON
- Uzunluk
- 1mm
- Additional Feature
- HIGH RELIABILITY
- Transistor Type
- NPN
- Montaj
- Surface Mount
- Case Connection
- COLLECTOR
- Vce Saturation Max Ib Ic
- 300mV @ 10mA, 100mA
- JESD-609 Kodu
- e4
- Transition Frequency
- 80MHz
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Emitter Voltage Vceo
- 50V
- ECCN Kodu
- EAR99
- Radyasyon Dayanımı
- No
- Reach Svhc
- No SVHC
- Tepe Reflow Sıcaklığı (°C)
- 260
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