Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- BOTTOM
- Emitter Base Voltage Vebo
- 5V
- Yükseklik
- 350μm
- Collector Base Voltage Vcbo
- 50V
- Genişlik
- 600μm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Uzunluk
- 1mm
- Transistor Element Material
- SILICON
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 2mA 6V
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Max Power Dissipation
- 450mW
- Kılıf / Paket
- 3-XFDFN
- Gain Bandwidth Product
- 80MHz
- Collectoremitter Breakdown Voltage
- 50V
- Fabrika Tedarik Süresi
- 15 Weeks
- Number Of Elements
- 1
- Pin Sayısı
- 3
- Parça Durumu
- Active
- Currentcollector Ic Max
- 100mA
- Max Collector Current
- 100mA
- Current Collector Cutoff Max
- 100nA ICBO
- Element Configuration
- Single
- Polaritychannel Type
- PNP
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Reach Svhc
- No SVHC
- Tepe Reflow Sıcaklığı (°C)
- 260
- Montaj Tipi
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 40
- Yayın Yılı
- 2011
- Ambalaj
- Tape & Reel (TR)
- Collector Emitter Voltage Vceo
- 50V
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e4
- Transition Frequency
- 80MHz
- Additional Feature
- HIGH RELIABILITY
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