Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 3
- Transition Frequency
- 60MHz
- Transistor Type
- NPN
- JESD-609 Kodu
- e4
- Element Configuration
- Single
- Case Connection
- COLLECTOR
- Kılıf / Paket
- 3-XFDFN
- Number Of Elements
- 1
- RoHS Durumu
- ROHS3 Compliant
- Collector Emitter Voltage Vceo
- 50V
- Max Breakdown Voltage
- 50V
- Parça Durumu
- Active
- Pin Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 2mA 6V
- Vce Saturation Max Ib Ic
- 250mV @ 10mA, 100mA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2015
- Tepe Reflow Süresi (maks. sn)
- 40
- Ambalaj
- Tape & Reel (TR)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Max Collector Current
- 100mA
- Gain Bandwidth Product
- 60MHz
- Reach Svhc
- No SVHC
- Radyasyon Dayanımı
- No
- Polaritychannel Type
- NPN
- ECCN Kodu
- EAR99
- Emitter Base Voltage Vebo
- 5V
- Transistor Element Material
- SILICON
- Pin Sayısı
- 3
- Uzunluk
- 1mm
- Max Power Dissipation
- 450mW
- Genişlik
- 600μm
- Additional Feature
- HIGH RELIABILITY
- Collectoremitter Breakdown Voltage
- 50V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Power Max
- 450mW
- Terminal Pozisyonu
- BOTTOM
- Fabrika Tedarik Süresi
- 14 Weeks
- Collector Base Voltage Vcbo
- 60V
- Current Collector Cutoff Max
- 100nA ICBO
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