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DN0150ALP4-7B

Diodes Incorporated

DN0150ALP4-7B

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.13
  • 10+ pcs$0.12
  • 100+ pcs$0.11
  • 500+ pcs$0.11

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Verified sourcing

RoHS

Compliant

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Specifications

Yayın Yılı
2015
Nem Hassasiyeti (MSL)
1 (Unlimited)
Ambalaj
Tape & Reel (TR)
Tepe Reflow Süresi (maks. sn)
40
Max Breakdown Voltage
50V
Çalışma Sıcaklığı
-55°C~150°C TJ
Collectoremitter Saturation Voltage
250mV
Vce Saturation Max Ib Ic
250mV @ 10mA, 100mA
Dc Current Gain Hfe Min Ic Vce
120 @ 2mA 6V
Parça Durumu
Active
Pin Sayısı
3
Kılıf / Paket
3-XFDFN
Element Configuration
Single
Case Connection
COLLECTOR
Collector Emitter Voltage Vceo
50V
RoHS Durumu
ROHS3 Compliant
Number Of Elements
1
Terminal Sayısı
3
JESD-609 Kodu
e4
Transistor Type
NPN
Transition Frequency
60MHz
Fabrika Tedarik Süresi
15 Weeks
Terminal Pozisyonu
BOTTOM
Kurşunsuz Kodu
yes
Montaj
Surface Mount
Montaj Tipi
Surface Mount
Continuous Collector Current
100mA
Current Collector Cutoff Max
100nA ICBO
Terminal Kaplaması
Nickel/Palladium/Gold (Ni/Pd/Au)
Collector Base Voltage Vcbo
60V
Max Power Dissipation
450mW
Temel Parça No
DN0150
Pin Sayısı
3
Additional Feature
HIGH RELIABILITY
Tepe Reflow Sıcaklığı (°C)
260
Collectoremitter Breakdown Voltage
50V
Emitter Base Voltage Vebo
5V
ECCN Kodu
EAR99
Transistor Element Material
SILICON
Gain Bandwidth Product
60MHz

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