DMTH6010LK3-13

Specifications

Yayın Yılı

2015

Montaj Tipi

Surface Mount

Power Dissipation Max

3.1W Ta

Jesd30 Code

R-PSSO-G2

Vgs Max

±20V

Rds On Max Id Vgs

8m Ω @ 20A, 10V

Current Continuous Drain Id25

14.8A Ta 70A Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

N-Channel

Additional Feature

HIGH RELIABILITY

Number Of Elements

1

Gate Charge Qg Max Vgs

41.3nC @ 10V

ECCN Kodu

EAR99

Drain Currentmax Abs Id

14.8A

Terminal Kaplaması

Matte Tin (Sn)

Continuous Drain Current Id

70A

Pulsed Drain Currentmax Idm

130A

Çalışma Sıcaklığı

-55°C~175°C TJ

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

3V @ 250μA

Parça Durumu

Active

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

JESD-609 Kodu

e3

Fabrika Tedarik Süresi

23 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Reference Standard

AEC-Q101

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Ds Breakdown Voltagemin

60V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Ambalaj

Tape & Reel (TR)

Terminal Sayısı

2

Input Capacitance Ciss Max Vds

2090pF @ 30V

Case Connection

DRAIN

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant