DMTH6002LPS-13

Specifications

Input Capacitance Ciss Max Vds

6555pF @ 30V

Case Connection

DRAIN

Terminal Sayısı

5

Drain To Source Voltage Vdss

60V

Avalanche Energy Rating Eas

294 mJ

RoHS Durumu

ROHS3 Compliant

REACH Uyumluluk Kodu

not_compliant

Drainsource On Resistancemax

0.003Ohm

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

18 Weeks

Reference Standard

AEC-Q101

Drive Voltage Max Rds On Min Rds On

6V 10V

Ds Breakdown Voltagemin

60V

Operating Mode

ENHANCEMENT MODE

Kılıf / Paket

8-PowerTDFN

Ambalaj

Tape & Reel (TR)

Yüzey Montaj

YES

Terminal Formu

FLAT

Çalışma Sıcaklığı

-55°C~175°C TJ

Pulsed Drain Currentmax Idm

200A

Drain Currentmax Abs Id

100A

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Parça Durumu

Active

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

3V @ 250μA

Jesd30 Code

R-PDSO-F5

Vgs Max

±20V

Montaj Tipi

Surface Mount

Power Dissipation Max

167W

Number Of Elements

1

Gate Charge Qg Max Vgs

130.8nC @ 10V

Rds On Max Id Vgs

2m Ω @ 50A, 10V

Current Continuous Drain Id25

100A Tc

Nem Hassasiyeti (MSL)

1 (Unlimited)