Volume pricing
- 1+ pcs$2.30
- 10+ pcs$2.17
- 100+ pcs$2.05
- 500+ pcs$1.93
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 8-PowerTDFN
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Input Capacitance Ciss Max Vds
- 4515pF @ 30V
- Avalanche Energy Rating Eas
- 160 mJ
- Vgs Max
- ±20V
- Terminal Formu
- FLAT
- ECCN Kodu
- EAR99
- Drain Currentmax Abs Id
- 22A
- Fet Type
- N-Channel
- Terminal Kaplaması
- Matte Tin (Sn)
- Ds Breakdown Voltagemin
- 60V
- Case Connection
- DRAIN
- Current Continuous Drain Id25
- 22A Ta 90A Tc
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj
- Surface Mount
- Pulsed Drain Currentmax Idm
- 100A
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 90A
- Power Dissipation Max
- 2.1W Ta 105W Tc
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Ambalaj
- Tape & Reel (TR)
- Vgsth Max Id
- 3V @ 250μA
- Terminal Pozisyonu
- DUAL
- Terminal Sayısı
- 5
- Additional Feature
- HIGH RELIABILITY
- Yayın Yılı
- 2014
- Pin Sayısı
- 8
- Jesd30 Code
- R-PDSO-F5
- Reference Standard
- AEC-Q101
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Number Of Elements
- 1
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Voltage Vdss
- 60V
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 2.8m Ω @ 25A, 10V
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