DMT10H010LSS-13

Specifications

Transistor Application

SWITCHING

Rds On Max Id Vgs

9.5m Ω @ 13A, 10V

Gate Charge Qg Max Vgs

71nC @ 10V

Parça Durumu

Active

Fabrika Tedarik Süresi

23 Weeks

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Drain To Source Voltage Vdss

100V

Terminal Pozisyonu

DUAL

Terminal Sayısı

8

Additional Feature

HIGH RELIABILITY

Yayın Yılı

2015

Reference Standard

AEC-Q101

Jesd30 Code

R-PDSO-G8

Continuous Drain Current Id

29.5A

Power Dissipation Max

1.4W Ta

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

2.8V @ 250μA

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj

Surface Mount

Pulsed Drain Currentmax Idm

75A

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Drain Currentmax Abs Id

11.5A

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn)

Ds Breakdown Voltagemin

100V

Current Continuous Drain Id25

11.5A Ta 29.5A Tc

Drainsource On Resistancemax

0.0095Ohm

Input Capacitance Ciss Max Vds

3000pF @ 50V

Avalanche Energy Rating Eas

61.5 mJ

Vgs Max

±20V

Terminal Formu

GULL WING

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON