Volume pricing
- 1+ pcs$0.37
- 10+ pcs$0.35
- 100+ pcs$0.33
- 500+ pcs$0.31
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Transistor Element Material
- SILICON
- Number Of Channels
- 1
- Terminal Formu
- GULL WING
- Kurşunsuz Kodu
- yes
- Pin Sayısı
- 8
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Tepe Reflow Sıcaklığı (°C)
- 260
- Tepe Reflow Süresi (maks. sn)
- 40
- Rise Time
- 24.4ns
- Reach Svhc
- No SVHC
- Vgsth Max Id
- 2.2V @ 250μA
- Radyasyon Dayanımı
- No
- Turn On Delay Time
- 5.5 ns
- Terminal Pozisyonu
- DUAL
- Additional Feature
- HIGH RELIABILITY
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Gate To Source Voltage Vgs
- 12V
- Fet Feature
- Schottky Diode (Body)
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 20 Weeks
- Montaj Tipi
- Surface Mount
- JESD-609 Kodu
- e3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 2296pF @ 15V
- Weight
- 73.992255mg
- Fall Time Typ
- 6.6 ns
- Vgs Max
- ±12V
- Power Dissipation
- 1.55W
- Terminal Kaplaması
- Matte Tin (Sn)
- ECCN Kodu
- EAR99
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 10.4A Ta
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Turn Off Delay Time
- 33.1 ns
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 63A
- Montaj
- Surface Mount
- Power Dissipation Max
- 1.55W Ta
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