DMP4065S-7

Specifications

Terminal Pozisyonu

DUAL

Power Dissipation Max

720mW Ta

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Vgsth Max Id

3V @ 250μA

Current Continuous Drain Id25

2.4A Ta

Yükseklik

1.1mm

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Kaplaması

Matte Tin (Sn) - annealed

Drainsource On Resistancemax

0.08Ohm

Gate Charge Qg Max Vgs

12.2nC @ 10V

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

23 Weeks

Turn On Delay Time

3.6 ns

Ambalaj

Tape & Reel (TR)

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Number Of Elements

1

Terminal Sayısı

3

Yayın Yılı

2004

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Vgs Max

±20V

Power Dissipation

720mW

Number Of Channels

1

Tepe Reflow Süresi (maks. sn)

30

Fet Type

P-Channel

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

80m Ω @ 4.2A, 10V

Drain To Source Breakdown Voltage

-40V

Max Junction Temperature Tj

150°C

JESD-609 Kodu

e3

Input Capacitance Ciss Max Vds

587pF @ 20V

Turn Off Delay Time

36.3 ns

Drain To Source Voltage Vdss

40V

Gate To Source Voltage Vgs

20V

Pin Sayısı

3

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3