Volume pricing
- 1+ pcs$0.47
- 10+ pcs$0.44
- 100+ pcs$0.42
- 500+ pcs$0.39
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 8V
- Fall Time Typ
- 16.6 ns
- Continuous Drain Current Id
- 760mA
- ECCN Kodu
- EAR99
- Drain Currentmax Abs Id
- 0.54A
- Case Connection
- DRAIN
- Fet Type
- P-Channel
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Input Capacitance Ciss Max Vds
- 76pF @ 15V
- Turn Off Delay Time
- 35.71 ns
- JESD-609 Kodu
- e4
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 675μm
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- Yayın Yılı
- 2012
- Power Dissipation Max
- 460mW Ta
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 540mA Ta
- Yükseklik
- 350μm
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drain To Source Voltage Vdss
- 30V
- Montaj
- Surface Mount
- Kılıf / Paket
- 3-XFDFN
- Pin Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kurşunsuz Kodu
- yes
- Vgs Max
- ±8V
- Tepe Reflow Süresi (maks. sn)
- 40
- Number Of Channels
- 1
- Rds On Max Id Vgs
- 1 Ω @ 400mA, 4.5V
- Drain To Source Breakdown Voltage
- -30V
- Additional Feature
- HIGH RELIABILITY
- Montaj Tipi
- Surface Mount
- Reach Svhc
- No SVHC
- Gate Charge Qg Max Vgs
- 0.9nC @ 4.5V
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