Volume pricing
- 1+ pcs$0.60
- 10+ pcs$0.57
- 100+ pcs$0.54
- 500+ pcs$0.51
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Süresi (maks. sn)
- 40
- Fet Type
- P-Channel
- Vgs Max
- ±25V
- JESD-609 Kodu
- e3
- Input Capacitance Ciss Max Vds
- 620pF @ 15V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 45m Ω @ 6A, 10V
- Pin Sayısı
- 8
- Montaj
- Surface Mount
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Drain To Source Voltage Vdss
- 30V
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 4.8A
- Kurşunsuz Kodu
- yes
- Ds Breakdown Voltagemin
- 30V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Vgsth Max Id
- 2V @ 250μA
- Power Dissipation Max
- 1.7W Ta
- Terminal Pozisyonu
- DUAL
- Drainsource On Resistancemax
- 0.045Ohm
- Terminal Kaplaması
- Matte Tin (Sn)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 4.8A Ta
- Fabrika Tedarik Süresi
- 18 Weeks
- Ambalaj
- Tape & Reel (TR)
- Gate Charge Qg Max Vgs
- 10.5nC @ 10V
- Montaj Tipi
- Surface Mount
- Reach Svhc
- No SVHC
- Yayın Yılı
- 2012
- Terminal Sayısı
- 8
- Transistor Application
- SWITCHING
- Terminal Formu
- GULL WING
- Pulsed Drain Currentmax Idm
- 30A
- Operating Mode
- ENHANCEMENT MODE
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
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