Volume pricing
- 1+ pcs$0.31
- 10+ pcs$0.29
- 100+ pcs$0.27
- 500+ pcs$0.26
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 1 Ω @ 200mA, 4.5V
- Drain To Source Breakdown Voltage
- -20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Input Capacitance Ciss Max Vds
- 49pF @ 15V
- Turn Off Delay Time
- 330 ns
- Kapasitans
- 49pF
- JESD-609 Kodu
- e4
- Case Connection
- DRAIN
- Vgs Max
- ±8V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Fet Type
- P-Channel
- Number Of Channels
- 1
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 330mA
- Drain To Source Voltage Vdss
- 20V
- Gate To Source Voltage Vgs
- 8V
- Montaj
- Surface Mount
- Kılıf / Paket
- 3-XFDFN
- Pin Sayısı
- 3
- Fall Time Typ
- 163 ns
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 330mA Ta
- Drainsource On Resistancemax
- 1Ohm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 37.3ns
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Jesd30 Code
- R-PSSO-N2
- Power Dissipation Max
- 360mW Ta
- Vgsth Max Id
- 1V @ 250μA
- Drive Voltage Max Rds On Min Rds On
- 1.5V 4.5V
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Element Configuration
- Single
- Transistor Application
- SWITCHING
- Terminal Formu
- NO LEAD
- Operating Mode
- ENHANCEMENT MODE
- Yayın Yılı
- 2014
- Terminal Sayısı
- 2
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