Volume pricing
- 1+ pcs$0.24
- 10+ pcs$0.23
- 100+ pcs$0.22
- 500+ pcs$0.20
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Current Continuous Drain Id25
- 6.2A Ta
- Yükseklik
- 580μm
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Power Dissipation Max
- 660mW Ta
- Jesd30 Code
- S-PDSO-N3
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2012
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
- Ambalaj
- Tape & Reel (TR)
- Genişlik
- 2.05mm
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- JESD-609 Kodu
- e4
- Turn Off Delay Time
- 79.1 ns
- Input Capacitance Ciss Max Vds
- 1537pF @ 10V
- Case Connection
- DRAIN
- Fet Type
- P-Channel
- Drain Currentmax Abs Id
- 4.2A
- ECCN Kodu
- EAR99
- Continuous Drain Current Id
- 6.2A
- Gate To Source Voltage Vgs
- 12V
- Fall Time Typ
- 35.5 ns
- Rise Time
- 14ns
- Terminal Pozisyonu
- DUAL
- Drive Voltage Max Rds On Min Rds On
- 1.8V 4.5V
- Uzunluk
- 2.05mm
- Vgsth Max Id
- 1.1V @ 250μA
- Element Configuration
- Single
- Number Of Elements
- 1
- Terminal Sayısı
- 3
- Gate Charge Qg Max Vgs
- 14.4nC @ 4.5V
- Reach Svhc
- No SVHC
- Montaj Tipi
- Surface Mount
- Fabrika Tedarik Süresi
- 14 Weeks
- Turn On Delay Time
- 13.7 ns
- Drain To Source Breakdown Voltage
- 20V
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