Volume pricing
- 1+ pcs$0.41
- 10+ pcs$0.38
- 100+ pcs$0.36
- 500+ pcs$0.34
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 2.3nC @ 4.5V
- Montaj Tipi
- Surface Mount
- Radyasyon Dayanımı
- No
- Fabrika Tedarik Süresi
- 23 Weeks
- Turn On Delay Time
- 7.9 ns
- Genişlik
- 1.05mm
- Ambalaj
- Tape & Reel (TR)
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Element Configuration
- Single
- Yayın Yılı
- 2015
- Terminal Sayısı
- 4
- Terminal Formu
- BALL
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Terminal Pozisyonu
- BOTTOM
- Power Dissipation Max
- 1W Ta
- Uzunluk
- 1.05mm
- Drive Voltage Max Rds On Min Rds On
- 2.5V 4.5V
- Vgsth Max Id
- 1.2V @ 250μA
- Current Continuous Drain Id25
- 4.1A Ta
- Yükseklik
- 380μm
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 10.7ns
- Terminal Kaplaması
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drainsource On Resistancemax
- 0.06Ohm
- Drain To Source Voltage Vdss
- 20V
- Gate To Source Voltage Vgs
- -6V
- Fall Time Typ
- 38 ns
- Pin Sayısı
- 4
- Kılıf / Paket
- 4-UFBGA, WLBGA
- Montaj
- Surface Mount
- Drain Currentmax Abs Id
- 3.6A
- Continuous Drain Current Id
- 4.1A
- ECCN Kodu
- EAR99
- Ds Breakdown Voltagemin
- 20V
- Fet Type
- P-Channel
- Reference Standard
- AEC-Q101
- Parça Durumu
- Active
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