Volume pricing
- 1+ pcs$0.15
- 10+ pcs$0.14
- 100+ pcs$0.14
- 500+ pcs$0.13
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2015
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Operating Mode
- ENHANCEMENT MODE
- Input Capacitance Ciss Max Vds
- 1837pF @ 15V
- Rds On Max Id Vgs
- 27m Ω @ 7A, 4.5V
- Terminal Sayısı
- 6
- Terminal Pozisyonu
- DUAL
- Current Continuous Drain Id25
- 7.6A Ta
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation Max
- 730mW Ta
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Montaj Tipi
- Surface Mount
- Montaj
- Surface Mount
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Case Connection
- DRAIN
- Fabrika Tedarik Süresi
- 16 Weeks
- Number Of Elements
- 1
- Tepe Reflow Süresi (maks. sn)
- 30
- Drain To Source Voltage Vdss
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Formu
- NO LEAD
- JESD-609 Kodu
- e4
- Vgsth Max Id
- 1V @ 250μA
- Ds Breakdown Voltagemin
- 20V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Gate Charge Qg Max Vgs
- 27nC @ 4.5V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Drainsource On Resistancemax
- 0.027Ohm
- Parça Durumu
- Active
- Vgs Max
- ±8V
- Continuous Drain Current Id
- 7.6A
- Drive Voltage Max Rds On Min Rds On
- 1.5V 4.5V
- Fet Type
- P-Channel
- Jesd30 Code
- S-PDSO-N6
- RoHS Durumu
- ROHS3 Compliant
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