DMP2018LFK-7

Specifications

Gate Charge Qg Max Vgs

113nC @ 10V

Pulsed Drain Currentmax Idm

90A

Genişlik

2.35mm

Kılıf / Paket

6-PowerUDFN

Drive Voltage Max Rds On Min Rds On

1.5V 4.5V

Continuous Drain Current Id

9.2A

Jesd30 Code

R-PDSO-N4

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

100.6 ns

Turn On Delay Time

22.8 ns

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Current Continuous Drain Id25

9.2A Ta

Rise Time

29.8ns

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

4748pF @ 10V

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tape & Reel (TR)

Gate To Source Voltage Vgs

12V

Montaj Tipi

Surface Mount

Vgs Max

±12V

Pin Sayısı

6

Parça Durumu

Active

Element Configuration

Single

Tepe Reflow Sıcaklığı (°C)

260

Uzunluk

2.55mm

RoHS Durumu

ROHS3 Compliant

Fet Type

P-Channel

Drain To Source Breakdown Voltage

20V

Number Of Channels

1

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

40

Fabrika Tedarik Süresi

14 Weeks

JESD-609 Kodu

e4

Pin Sayısı

6

Vgsth Max Id

1.2V @ 200μA