Volume pricing
- 1+ pcs$0.27
- 10+ pcs$0.26
- 100+ pcs$0.24
- 500+ pcs$0.23
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 6 Weeks
- Case Connection
- DRAIN
- Drain To Source Voltage Vdss
- 12V
- Number Of Elements
- 1
- Number Of Channels
- 1
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Formu
- NO LEAD
- JESD-609 Kodu
- e4
- Kapasitans
- 55.4pF
- Vgsth Max Id
- 1V @ 250μA
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 0.84nC @ 4.5V
- Element Configuration
- Single
- Parça Durumu
- Active
- Vgs Max
- ±8V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kılıf / Paket
- 3-XFDFN
- Drainsource On Resistancemax
- 0.8Ohm
- Drive Voltage Max Rds On Min Rds On
- 1.5V 4.5V
- Continuous Drain Current Id
- 200mA
- Fet Type
- P-Channel
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PSSO-N2
- Operating Mode
- ENHANCEMENT MODE
- Yayın Yılı
- 2014
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Turn On Delay Time
- 16 ns
- Input Capacitance Ciss Max Vds
- 55.4pF @ 10V
- Rds On Max Id Vgs
- 800m Ω @ 200mA, 4.5V
- Terminal Sayısı
- 2
- Current Continuous Drain Id25
- 200mA Ta
- Rise Time
- 62ns
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation Max
- 360mW Ta
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj Tipi
- Surface Mount
- Gate To Source Voltage Vgs
- 8V
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