Volume pricing
- 1+ pcs$0.45
- 10+ pcs$0.42
- 100+ pcs$0.40
- 500+ pcs$0.38
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 5.8nC @ 4.5V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Vgs Max
- ±8V
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kılıf / Paket
- 3-XFDFN
- Drainsource On Resistancemax
- 0.1Ohm
- Drive Voltage Max Rds On Min Rds On
- 1.5V 4.5V
- Continuous Drain Current Id
- 2A
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- P-Channel
- Drain To Source Voltage Vdss
- 12V
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 6 Weeks
- Case Connection
- DRAIN
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Formu
- NO LEAD
- JESD-609 Kodu
- e4
- Pin Sayısı
- 3
- Ds Breakdown Voltagemin
- 12V
- Vgsth Max Id
- 1V @ 250μA
- Montaj
- Surface Mount
- Drain Currentmax Abs Id
- 2A
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Operating Mode
- ENHANCEMENT MODE
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2014
- Current Continuous Drain Id25
- 2A Ta
- Input Capacitance Ciss Max Vds
- 514pF @ 5V
- Rds On Max Id Vgs
- 100m Ω @ 2A, 4.5V
- Terminal Pozisyonu
- DUAL
- Terminal Sayısı
- 3
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation Max
- 480mW Ta
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
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