DMP10H400SE-13

Specifications

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

2.3A

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

2W Ta 13.7W Tc

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2015

Terminal Pozisyonu

DUAL

Terminal Sayısı

4

Rds On Max Id Vgs

250m Ω @ 5A, 10V

Input Capacitance Ciss Max Vds

1239pF @ 25V

Current Continuous Drain Id25

2.3A Ta 6A Tc

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

6A

Fet Type

P-Channel

Jesd30 Code

R-PDSO-G4

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

10A

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

17.5nC @ 10V

Parça Durumu

Active

Vgs Max

±20V

Drainsource On Resistancemax

0.3Ohm

Kılıf / Paket

TO-261-4, TO-261AA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Ds Breakdown Voltagemin

100V

Vgsth Max Id

3V @ 250μA

Fabrika Tedarik Süresi

17 Weeks

Case Connection

DRAIN

Drain To Source Voltage Vdss

100V

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ