DMNH6021SK3Q-13

Specifications

Fabrika Tedarik Süresi

17 Weeks

Case Connection

DRAIN

Drain To Source Voltage Vdss

60V

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Çalışma Sıcaklığı

-55°C~175°C TJ

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Seri

Automotive, AEC-Q101

Ds Breakdown Voltagemin

60V

Vgsth Max Id

3V @ 250μA

Pulsed Drain Currentmax Idm

80A

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

20.1nC @ 10V

REACH Uyumluluk Kodu

not_compliant

Parça Durumu

Active

Vgs Max

±20V

Drainsource On Resistancemax

0.028Ohm

Kılıf / Paket

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

50A

Fet Type

N-Channel

Avalanche Energy Rating Eas

64 mJ

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PSSO-G2

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2016

Input Capacitance Ciss Max Vds

1143pF @ 25V

Rds On Max Id Vgs

23m Ω @ 12A, 10V

Terminal Sayısı

2

Terminal Pozisyonu

SINGLE

Current Continuous Drain Id25

50A Tc

Additional Feature

HIGH RELIABILITY

Power Dissipation Max

2.1W Ta

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)