DMN65D8L-7

Specifications

Weight

7.994566mg

Drive Voltage Max Rds On Min Rds On

5V 10V

Continuous Drain Current Id

310mA

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Gate Charge Qg Max Vgs

0.87nC @ 10V

Genişlik

1.4mm

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

540mW

Gate To Source Voltage Vgs

20V

Montaj Tipi

Surface Mount

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Cut Tape (CT)

Current Continuous Drain Id25

310mA Ta

Rise Time

2.8ns

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

22pF @ 25V

Terminal Pozisyonu

DUAL

Turn On Delay Time

2.7 ns

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Element Configuration

Single

Parça Durumu

Active

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Drainsource On Resistancemax

4Ohm

Uzunluk

3mm

Pin Sayısı

3

Vgsth Max Id

2V @ 250μA

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Drain To Source Breakdown Voltage

60V

Tepe Reflow Süresi (maks. sn)

40

Number Of Elements

1

Number Of Channels

1

Fabrika Tedarik Süresi

14 Weeks

Drain Currentmax Abs Id

0.27A