DMN63D8LW-7

Specifications

Reference Standard

AEC-Q101

Continuous Drain Current Id

380mA

Drive Voltage Max Rds On Min Rds On

2.5V 10V

Fet Type

N-Channel

Jesd30 Code

R-PDSO-G3

RoHS Durumu

ROHS3 Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

0.9nC @ 10V

Drainsource On Resistancemax

4.5Ohm

Kılıf / Paket

SC-70, SOT-323

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

±20V

Parça Durumu

Active

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Vgsth Max Id

1.5V @ 250μA

Ds Breakdown Voltagemin

30V

Fabrika Tedarik Süresi

14 Weeks

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

30

Drain To Source Voltage Vdss

30V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain Currentmax Abs Id

0.38A

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Surface Mount

Power Dissipation Max

300mW Ta

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2015

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

23.2pF @ 25V

Rds On Max Id Vgs

2.8 Ω @ 250mA, 10V

Terminal Pozisyonu

DUAL

Terminal Sayısı

3

Additional Feature

HIGH RELIABILITY

Current Continuous Drain Id25

380mA Ta