DMN63D8LW-13

Specifications

Turn Off Delay Time

11.4 ns

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn)

Drain Currentmax Abs Id

0.38A

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2015

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

2.3 ns

Terminal Pozisyonu

DUAL

Terminal Sayısı

3

Rds On Max Id Vgs

2.8 Ω @ 250mA, 10V

Input Capacitance Ciss Max Vds

23.2pF @ 25V

Additional Feature

HIGH RELIABILITY

Max Junction Temperature Tj

150°C

Current Continuous Drain Id25

380mA Ta

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

300mW Ta

Yükseklik

1.1mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

0.9nC @ 10V

Drainsource On Resistancemax

4.5Ohm

Kılıf / Paket

SC-70, SOT-323

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Active

Vgs Max

±20V

Continuous Drain Current Id

380mA

Drive Voltage Max Rds On Min Rds On

2.5V 10V

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G3

Fabrika Tedarik Süresi

14 Weeks

Number Of Elements

1

Drain To Source Breakdown Voltage

30V

Number Of Channels

1

Power Dissipation

300mW