DMN6140L-7

Specifications

Fabrika Tedarik Süresi

15 Weeks

Drain To Source Voltage Vdss

60V

Tepe Reflow Süresi (maks. sn)

30

Number Of Channels

1

Number Of Elements

1

Çalışma Sıcaklığı

-55°C~150°C TJ

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Ds Breakdown Voltagemin

60V

Vgsth Max Id

3V @ 250μA

Pin Sayısı

3

Temel Parça No

DMN6140

Gate Charge Qg Max Vgs

8.6nC @ 10V

Element Configuration

Single

Parça Durumu

Active

Vgs Max

±20V

Tepe Reflow Sıcaklığı (°C)

260

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

1.6A

Weight

7.994566mg

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Yayın Yılı

2014

Turn On Delay Time

2.6 ns

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

315pF @ 40V

Rds On Max Id Vgs

140m Ω @ 1.8A, 10V

Terminal Sayısı

3

Terminal Pozisyonu

DUAL

Current Continuous Drain Id25

1.6A Ta

Additional Feature

HIGH RELIABILITY

Rise Time

3.6ns

Power Dissipation Max

700mW Ta

Ambalaj

Cut Tape (CT)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)