DMN6140L-13

Specifications

Reference Standard

AEC-Q101

Continuous Drain Current Id

1.6A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G3

Configuration

SINGLE WITH BUILT-IN DIODE

Gate Charge Qg Max Vgs

8.6nC @ 10V

Drainsource On Resistancemax

0.14Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Vgs Max

±20V

Parça Durumu

Active

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Vgsth Max Id

3V @ 250μA

Ds Breakdown Voltagemin

60V

Temel Parça No

DMN6140

Fabrika Tedarik Süresi

15 Weeks

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

60V

Çalışma Sıcaklığı

-55°C~150°C TJ

HTS Kodu

8541.29.00.95

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Surface Mount

Ambalaj

Tape & Reel (TR)

Power Dissipation Max

700mW Ta

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Montaj Tipi

Surface Mount

Yayın Yılı

2013

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

140m Ω @ 1.8A, 10V

Terminal Sayısı

3

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

315pF @ 40V

Additional Feature

HIGH RELIABILITY