DMN6040SK3-13

Specifications

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

20A

Weight

3.949996g

Jesd30 Code

R-PSSO-G2

Genişlik

6.2mm

Gate Charge Qg Max Vgs

22.4nC @ 10V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection

DRAIN

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

4 ns

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Turn On Delay Time

6.6 ns

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

1287pF @ 25V

Current Continuous Drain Id25

20A Tc

Rise Time

8.1ns

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Vgs Max

±20V

Parça Durumu

Active

Element Configuration

Single

Uzunluk

6.7mm

Drainsource On Resistancemax

0.04Ohm

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Ds Breakdown Voltagemin

60V

Vgsth Max Id

3V @ 250μA

Pin Sayısı

3

Fabrika Tedarik Süresi

18 Weeks

Drain To Source Voltage Vdss

60V

Number Of Channels

1

Number Of Elements

1

Terminal Kaplaması

Matte Tin (Sn)