DMN53D0LQ-7

Specifications

Çalışma Sıcaklığı

-55°C~150°C TJ

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

30

Drain To Source Voltage Vdss

50V

Fabrika Tedarik Süresi

22 Weeks

Vgsth Max Id

1.5V @ 250μA

Ds Breakdown Voltagemin

50V

Seri

Automotive, AEC-Q101

Terminal Formu

GULL WING

JESD-609 Kodu

e3

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Active

Vgs Max

±20V

Gate Charge Qg Max Vgs

0.6nC @ 4.5V

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-PDSO-G3

RoHS Durumu

ROHS3 Compliant

Fet Type

N-Channel

Continuous Drain Current Id

500mA

Drive Voltage Max Rds On Min Rds On

2.5V 10V

Additional Feature

HIGH RELIABILITY

Current Continuous Drain Id25

500mA Ta

Terminal Pozisyonu

DUAL

Terminal Sayısı

3

Rds On Max Id Vgs

1.6 Ω @ 500mA, 10V

Input Capacitance Ciss Max Vds

46pF @ 25V

Yayın Yılı

2016

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Power Dissipation Max

370mW Ta

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Terminal Kaplaması

Matte Tin (Sn) - annealed

Drain Currentmax Abs Id

0.5A

HTS Kodu

8541.21.00.95