DMN4800LSS-13

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Gate To Source Voltage Vgs

25V

Montaj Tipi

Surface Mount

Turn On Delay Time

5.03 ns

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Rise Time

4.5ns

Current Continuous Drain Id25

9A Ta

Terminal Pozisyonu

DUAL

Input Capacitance Ciss Max Vds

798pF @ 10V

Reach Svhc

No SVHC

Fall Time Typ

4.5 ns

Power Dissipation

1.7W

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

8.6A

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Weight

73.992255mg

Gate Charge Qg Max Vgs

9.47nC @ 5V

Genişlik

3.95mm

Pulsed Drain Currentmax Idm

50A

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation Max

1.46W Ta

Yükseklik

1.5mm

Kurşunsuz Kodu

yes

Yayın Yılı

2009

Additional Feature

HIGH RELIABILITY

Terminal Sayısı

8

Rds On Max Id Vgs

16m Ω @ 9A, 10V

Drain Currentmax Abs Id

9A

Terminal Kaplaması

Matte Tin (Sn)

Turn Off Delay Time

26.33 ns

Montaj

Surface Mount

Kurşunsuz

Lead Free

Radyasyon Dayanımı

No

JESD-609 Kodu

e3

Terminal Formu

GULL WING

Pin Sayısı

8