Volume pricing
- 1+ pcs$0.12
- 10+ pcs$0.11
- 100+ pcs$0.11
- 500+ pcs$0.10
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drive Voltage Max Rds On Min Rds On
- 1.2V 4.5V
- Continuous Drain Current Id
- 220mA
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 0.35nC @ 4.5V
- Element Configuration
- Single
- Parça Durumu
- Active
- Vgs Max
- ±12V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Kılıf / Paket
- 3-XFDFN
- Terminal Formu
- NO LEAD
- JESD-609 Kodu
- e4
- Pin Sayısı
- 3
- Vgsth Max Id
- 1V @ 250μA
- Number Of Elements
- 1
- Drain To Source Breakdown Voltage
- 30V
- Number Of Channels
- 1
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Fabrika Tedarik Süresi
- 15 Weeks
- Case Connection
- DRAIN
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Drain Currentmax Abs Id
- 0.22A
- Fall Time Typ
- 6.9 ns
- Montaj
- Surface Mount
- Turn Off Delay Time
- 20 ns
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation Max
- 393mW Ta
- Gate To Source Voltage Vgs
- 12V
- Montaj Tipi
- Surface Mount
- Turn On Delay Time
- 3.1 ns
- Operating Mode
- ENHANCEMENT MODE
- Yayın Yılı
- 2014
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Current Continuous Drain Id25
- 220mA Ta
- Rise Time
- 2ns
- Input Capacitance Ciss Max Vds
- 22.2pF @ 15V
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